IXGH17N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 34A 150W TO247AD
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3mJ (off)
Td (on/off) @ 25°C 100ns/500ns
Current - Collector Pulsed (Icm) 68A
Gate Charge 100nC
Turn Off Time-Nom (toff) 1900 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 17A
Test Condition 800V, 17A, 82 Ω, 15V
Turn On Time 300 ns
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-247AD
Max Collector Current 34A
Collector Emitter Voltage (VCEO) 1kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number IXG*17N100
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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