Fall Time-Max (tf) 1100 ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 9.3mJ (off)
Td (on/off) @ 25°C 45ns/400ns
Current - Collector Pulsed (Icm) 80A
Turn Off Time-Nom (toff) 1600 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 16A
Test Condition 1360V, 16A, 10 Ω, 15V
Collector Emitter Saturation Voltage 2.7V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Max Collector Current 32A
Collector Emitter Voltage (VCEO) 1.7kV
Turn-Off Delay Time 200 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IXG*16N170
Max Power Dissipation 190W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ