IXGH15N120CD1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 30A 150W TO247
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Buying Options
Total Price: USD $4.97
Unit Price: USD $4.9704
≥1 USD $4.9704
≥10 USD $4.07835
≥100 USD $3.95105
≥500 USD $3.8228
≥1000 USD $3.6955
Inventory: 10746
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*15N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 30A
Reverse Recovery Time 40 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 43 ns
Test Condition 960V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 15A
Turn Off Time-Nom (toff) 520 ns
Gate Charge 69nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 190ns
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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