Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 320μJ (off)
Td (on/off) @ 25°C 20ns/135ns
Current - Collector Pulsed (Icm) 48A
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 12A
Test Condition 720V, 12A, 22 Ω, 15V
Collector Emitter Breakdown Voltage 900V
Max Collector Current 24A
Collector Emitter Voltage (VCEO) 900V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFAST?, Lightspeed?
Operating Temperature -55°C~150°C TJ