Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 540W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N30
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1.42V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 120A
Turn Off Time-Nom (toff) 356 ns
Current - Collector Pulsed (Icm) 480A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V