IXGH10N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1700V 20A 110W TO247
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Buying Options
Total Price: USD $7.87
Unit Price: USD $7.8672
≥1 USD $7.8672
≥10 USD $6.27704
≥100 USD $5.61638
≥500 USD $4.955641
≥1000 USD $4.460069
≥3000 USD $4.179252
Inventory: 87
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 17 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 110W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*10N170
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 45 ns
Power - Max 110W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 20A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 300 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 10A
Turn Off Time-Nom (toff) 630 ns
IGBT Type NPT
Gate Charge 32nC
Current - Collector Pulsed (Icm) 70A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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