IXGH10N100AU1
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 20A 100W TO247AD
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1kV
Max Power Dissipation 100W
Terminal Position SINGLE
Current Rating 20A
Base Part Number IXG*10N100
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 20A
Reverse Recovery Time 60ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 300 ns
Test Condition 800V, 10A, 150 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 10A
Turn Off Time-Nom (toff) 1200 ns
Gate Charge 52nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 100ns/550ns
Switching Energy 2mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 4 V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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