Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 1550 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 4V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Base Part Number IXG*10N100
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Moisture Sensitivity Level (MSL) 1 (Unlimited)