IXGF32N170
RoHS 
RoHS compliant
RoHS compliantPackage i4-Pac?-5 (3 Leads)
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXGF32N170 IGBT Single Transistor, 44 A, 3.5 V, 200 W, 1.7 kV, ISOPLUS i4-PAC, 3 Pins
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Buying Options
Total Price: USD $40.27
Unit Price: USD $40.2724
≥1 USD $40.2724
≥10 USD $33.04385
≥100 USD $32.0112
≥500 USD $30.97855
≥1000 USD $29.9459
≥3000 USD $26.84795
Inventory: 585
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac?-5 (3 Leads)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*32N170
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 44A
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 90 ns
Test Condition 1020V, 32A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 32A
Turn Off Time-Nom (toff) 920 ns
IGBT Type NPT
Gate Charge 146nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 45ns/270ns
Switching Energy 10.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 500 ns
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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