Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 114W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*25N250
Qualification Status Not Qualified
Element Configuration Single
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5kV
Max Collector Current 30A
Collector Emitter Breakdown Voltage 2.5kV
Voltage - Collector Emitter Breakdown (Max) 2500V
Vce(on) (Max) @ Vge, Ic 5.2V @ 15V, 75A
Turn Off Time-Nom (toff) 409 ns
Current - Collector Pulsed (Icm) 200A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V