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IXGB200N60B3

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 600V 75A 1250W PLUS264
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Fall Time-Max (tf) 300ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.6mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C 44ns/310ns
Current - Collector Pulsed (Icm) 600A
Gate Charge 750nC
IGBT Type PT
Turn Off Time-Nom (toff) 730 ns
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 100A
Test Condition 300V, 100A, 1 Ω, 15V
Turn On Time 122 ns
Collector Emitter Saturation Voltage 1.35V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 1.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 1250W
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 1.25kW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Base Part Number IXG*200N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 1.25kW
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 26 Weeks

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