IXGA8N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 16A 54W TO263
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Technical Details
Technical
Input Type Standard
Turn On Delay Time 15 ns
Power - Max 54W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 600 ns
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 16A
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 15 ns
Test Condition 800V, 8A, 120 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 8A
Turn Off Time-Nom (toff) 900 ns
IGBT Type PT
Gate Charge 26.5nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 15ns/600ns
Switching Energy 2.3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 54W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Weight 1.59999g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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