IXGA48N60A3
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 120A 300W TO263AA
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Buying Options
Total Price: USD $5.25
Unit Price: USD $5.2535
≥1 USD $5.2535
≥10 USD $4.3111
≥100 USD $4.1762
≥500 USD $4.0413
≥1000 USD $3.9064
≥3000 USD $3.50265
Inventory: 2208
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.59999g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35V
Max Collector Current 120A
Collector Emitter Breakdown Voltage 600V
Turn On Time 54 ns
Test Condition 480V, 32A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 32A
Turn Off Time-Nom (toff) 925 ns
IGBT Type PT
Gate Charge 110nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 25ns/334ns
Switching Energy 950μJ (on), 2.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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