IXGA36N60A3
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 740μJ (on), 3mJ (off)
Td (on/off) @ 25°C 18ns/330ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 80nC
IGBT Type PT
Turn Off Time-Nom (toff) 1000 ns
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Test Condition 400V, 30A, 5 Ω, 15V
Turn On Time 43 ns
Power Dissipation-Max (Abs) 220W
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 23ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 220W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 2
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GenX3?
Published 2013
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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