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IXGA30N60C3D4

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT Transistors 600V 30A
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 270μJ (on), 90μJ (off)
Td (on/off) @ 25°C 16ns/42ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 38nC
IGBT Type PT
Turn Off Time-Nom (toff) 160 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 300V, 20A, 5 Ω, 15V
Turn On Time 45 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 60 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 220W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GenX3?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 20 Weeks

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