IXGA30N60C3C1
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 220W TO263
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 120μJ (on), 90μJ (off)
Td (on/off) @ 25°C 17ns/42ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 38nC
IGBT Type PT
Turn Off Time-Nom (toff) 160 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 300V, 20A, 5 Ω, 15V
Turn On Time 37 ns
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 220W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number IXG*30N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 220W
Subcategory Insulated Gate BIP Transistors
Terminal Finish PURE TIN
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GenX3?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.59999g
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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