Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 920μJ (on), 560μJ (off)
Td (on/off) @ 25°C 16ns/150ns
Current - Collector Pulsed (Icm) 80A
Turn Off Time-Nom (toff) 720 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 16A
Test Condition 600V, 16A, 15 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 36A
Collector Emitter Voltage (VCEO) 3.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 180W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ