IXGA16N60B2
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 40A 150W TO263
PDF
/
Inventory: 3239
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 1.59999g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFAST?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish PURE TIN
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*16N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 43 ns
Test Condition 400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 12A
Turn Off Time-Nom (toff) 280 ns
IGBT Type PT
Gate Charge 24nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 18ns/73ns
Switching Energy 160μJ (on), 120μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
Recommended For You
IXGA16N60B2+price,IXGA16N60B2+datasheet,IXGA16N60B2+in stock,buy+IXGA16N60B2,finder+IXGA16N60B2,IXGA16N60B2+tutorials,IXGA16N60B2+download