IXGA12N60C
RoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 24A 100W TO263AA
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.59999g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFAST?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*12N60
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 24A
Collector Emitter Breakdown Voltage 600V
Turn On Time 40 ns
Test Condition 480V, 12A, 18 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Turn Off Time-Nom (toff) 170 ns
Gate Charge 32nC
Current - Collector Pulsed (Icm) 48A
Td (on/off) @ 25°C 20ns/60ns
Switching Energy 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 180ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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