IXGA12N120A3
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 22A 100W TO263
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Buying Options
Total Price: USD $1.72
Unit Price: USD $1.7226
≥1 USD $1.7226
≥10 USD $1.625092
≥100 USD $1.533103
≥500 USD $1.446322
≥1000 USD $1.364457
Inventory: 1178
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 60A
Gate Charge 20.4nC
IGBT Type PT
Turn Off Time-Nom (toff) 1545 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 12A
Turn On Time 202 ns
Collector Emitter Saturation Voltage 2.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-263AA
Max Collector Current 22A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
Terminal Form GULL WING
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series GenX3?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 1.59999g
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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