Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.5mJ (off)
Td (on/off) @ 25°C 100ns/850ns
Current - Collector Pulsed (Icm) 48A
Turn Off Time-Nom (toff) 900 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 12A
Test Condition 800V, 12A, 120 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
Max Collector Current 24A
Collector Emitter Voltage (VCEO) 3.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Base Part Number IXG*12N100
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ