Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 375W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 95A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.1V
Test Condition 600V, 60A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 60A
Turn Off Time-Nom (toff) 710 ns
Switching Energy 7.2mJ (on), 4.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V