IXER35N120D1
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXER35N120D1 IGBT Single Transistor, 50 A, 2.2 V, 200 W, 1.2 kV, ISOPLUS-247, 3 Pins
PDF
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Buying Options
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
Inventory: 2107
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 5.4mJ (on), 2.6mJ (off)
Gate Charge 150nC
IGBT Type NPT
Turn Off Time-Nom (toff) 490 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 35A
Test Condition 600V, 35A, 39 Ω, 15V
Turn On Time 135 ns
Collector Emitter Saturation Voltage 2.2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 80 ns
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 2.8V
Turn-Off Delay Time 440 ns
Rise Time 50ns
Transistor Application POWER CONTROL
Turn On Delay Time 85 ns
Input Type Standard
Case Connection ISOLATED
Power Dissipation 200W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 50A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Voltage - Rated DC 1.2kV
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
JESD-609 Code e1
Published 2004
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 5.3g
Number of Pins 247
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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