Gate-Emitter Thr Voltage-Max 7V
Gate-Emitter Voltage-Max 20V
Switching Energy 55mJ (on), 165mJ (off)
Td (on/off) @ 25°C 160ns/630ns
Current - Collector Pulsed (Icm) 400A
Turn Off Time-Nom (toff) 1170 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Test Condition 2800V, 40A, 33 Ω, 15V
Collector Emitter Saturation Voltage 3V
Current - Collector (Ic) (Max) 90A
Voltage - Collector Emitter Breakdown (Max) 4000V
Collector Emitter Breakdown Voltage 4kV
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 4kV
Polarity/Channel Type N-CHANNEL
Transistor Application GENERAL PURPOSE SWITCHING
Element Configuration Single
Max Power Dissipation 380W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ