IXEH40N120D1
RoHS
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Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Tube Through Hole NPT Single IGBT Transistor 3V @ 15V 40A 60A 300W 180ns
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 6.1mJ (on), 3mJ (off)
Gate Charge 150nC
IGBT Type NPT
Turn Off Time-Nom (toff) 490 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Test Condition 600V, 40A, 39 Ω, 15V
Turn On Time 135 ns
Collector Emitter Saturation Voltage 2.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Reverse Recovery Time 180 ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
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