IXEH40N120
RoHS
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Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 60A 300W TO247AD
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Reverse Recovery Time 180 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.4V
Turn On Time 135 ns
Test Condition 600V, 40A, 39 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Turn Off Time-Nom (toff) 490 ns
IGBT Type NPT
Gate Charge 150nC
Switching Energy 6.1mJ (on), 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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