IXDR30N120D1
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 200W ISOPLUS247
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Buying Options
Total Price: USD $3.27
Unit Price: USD $3.271747
≥1 USD $3.271747
≥10 USD $3.203476
≥30 USD $3.158837
≥100 USD $3.114199
Inventory: 5206
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXD*30N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 70 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Reverse Recovery Time 40ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.4V
Turn On Time 170 ns
Test Condition 600V, 30A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
Gate Charge 120nC
Current - Collector Pulsed (Icm) 60A
Switching Energy 4.6mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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