IXDR30N120
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 Pins
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.6mJ (on), 3.4mJ (off)
Current - Collector Pulsed (Icm) 60A
Gate Charge 120nC
IGBT Type NPT
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 30A
Test Condition 600V, 30A, 47 Ω, 15V
Turn On Time 170 ns
Collector Emitter Saturation Voltage 2.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 500 ns
Rise Time 70 ns
Transistor Application POWER CONTROL
Turn On Delay Time 100 ns
Input Type Standard
Case Connection ISOLATED
Power Dissipation 200W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXD*30N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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