IXDP35N60B
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 250W TO220AB
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.82mm
Length 10.66mm
Height 9.15mm
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.6mJ (on), 800μJ (off)
Current - Collector Pulsed (Icm) 70A
Gate Charge 120nC
IGBT Type NPT
Turn Off Time-Nom (toff) 390 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 35A
Test Condition 300V, 35A, 10 Ω, 15V
Turn On Time 75 ns
Collector Emitter Saturation Voltage 2.1V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 250W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXD*35N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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