IXDP20N60BD1
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 32A 140W TO220AB
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Technical Details
Technical
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.2V
Turn On Time 55 ns
Test Condition 300V, 20A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A
Turn Off Time-Nom (toff) 315 ns
IGBT Type NPT
Gate Charge 70nC
Current - Collector Pulsed (Icm) 40A
Switching Energy 900μJ (on), 400μJ (off)
JEDEC-95 Code TO-220AB
Reverse Recovery Time 40ns
Max Collector Current 32A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 140W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 140W
Additional Feature HIGH SPEED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 28 Weeks
Alternative Model
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