Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.1mJ (on), 2.4mJ (off)
Current - Collector Pulsed (Icm) 50A
Turn Off Time-Nom (toff) 570 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 600V, 20A, 82 Ω, 15V
Collector Emitter Saturation Voltage 2.4V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 38A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXD*20N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW SATURATION VOLTAGE, LOW SWITCHING LOSSES
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ