Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.04kW
Base Part Number IXB*75N170
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 200A
Reverse Recovery Time 1.5 μs
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A
Turn Off Time-Nom (toff) 840 ns
Current - Collector Pulsed (Icm) 580A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V