IXBX55N300
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 3000V 130A 625W PLUS247
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Buying Options
Total Price: USD $539.56
Unit Price: USD $539.56485
≥1 USD $539.56485
Inventory: 1220
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 25V
Current - Collector Pulsed (Icm) 600A
Gate Charge 335nC
Turn Off Time-Nom (toff) 475 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 55A
Turn On Time 637 ns
Voltage - Collector Emitter Breakdown (Max) 3000V
Collector Emitter Breakdown Voltage 3kV
Reverse Recovery Time 1.9 μs
Max Collector Current 130A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 625W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 625W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e1
Series BIMOSFET?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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