Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 36A
Turn Off Time-Nom (toff) 700 ns
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 6A
Collector Emitter Saturation Voltage 2.84V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 1.08 μs
Max Collector Current 12A
Collector Emitter Voltage (VCEO) 1.7kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 75W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ