Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 25V
Td (on/off) @ 25°C 72ns/445ns
Current - Collector Pulsed (Icm) 400A
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 42A
Test Condition 1500V, 42A, 20 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 3000V
Collector Emitter Breakdown Voltage 3kV
Reverse Recovery Time 1.7 μs
Max Collector Current 104A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Reach Compliance Code unknown
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ