IXBT42N170A
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.7KV 42A 3-Pin(2+Tab) TO-268
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Buying Options
Total Price: USD $56.05
Unit Price: USD $56.047701
≥1 USD $56.047701
≥210 USD $22.363939
≥510 USD $21.616899
≥990 USD $21.246661
Inventory: 8784
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.43mJ (on), 430μJ (off)
Td (on/off) @ 25°C 19ns/200ns
Current - Collector Pulsed (Icm) 265A
Gate Charge 188nC
Turn Off Time-Nom (toff) 420 ns
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 21A
Test Condition 850V, 21A, 1 Ω, 15V
Turn On Time 63 ns
Max Breakdown Voltage 1.7kV
Collector Emitter Saturation Voltage 5.2V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 330 ns
Max Collector Current 42A
Collector Emitter Voltage (VCEO) 1.7kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 357W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number IXB*42N170
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 357W
Subcategory Insulated Gate BIP Transistors
Terminal Finish PURE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series BIMOSFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount, Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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