IXBT42N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1700V 80A 360W TO268
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Buying Options
Total Price: USD $70.53
Unit Price: USD $70.53459
≥1 USD $70.53459
≥10 USD $66.54206
≥100 USD $62.77553
≥500 USD $59.2222
≥1000 USD $55.87
≥3000 USD $52.70755
Inventory: 4797
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 300A
Gate Charge 188nC
Turn Off Time-Nom (toff) 1070 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A
Turn On Time 224 ns
Collector Emitter Saturation Voltage 2.3V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 1.32 μs
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 1.7kV
Turn-Off Delay Time 560 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 360W
Turn On Delay Time 45 ns
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number IXB*42N170
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 360W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish PURE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series BIMOSFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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