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IXBT32N300

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 3000V 80A 400W TO268
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 280A
Gate Charge 142nC
Turn Off Time-Nom (toff) 795 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 32A
Turn On Time 573 ns
Voltage - Collector Emitter Breakdown (Max) 3000V
Collector Emitter Breakdown Voltage 3kV
Reverse Recovery Time 1.5 μs
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 400W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Max Power Dissipation 400W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Pbfree Code yes
JESD-609 Code e3
Series BIMOSFET?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 10 Weeks

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