IXBT10N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1.7KV 20A 3-Pin(2+Tab) TO-268
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 6mJ (off)
Td (on/off) @ 25°C 35ns/500ns
Current - Collector Pulsed (Icm) 40A
Gate Charge 30nC
Turn Off Time-Nom (toff) 1800 ns
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 10A
Test Condition 1360V, 10A, 56 Ω, 15V
Turn On Time 63 ns
Collector Emitter Saturation Voltage 3.4V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 360 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 1.7kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 140W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Max Power Dissipation 140W
Subcategory Insulated Gate BIP Transistors
Terminal Finish PURE TIN
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series BIMOSFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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