IXBR42N170
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1700V 57A 200W ISOPLUS247
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 300A
Gate Charge 188nC
Turn Off Time-Nom (toff) 1070 ns
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 42A
Turn On Time 224 ns
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 1.32 μs
Max Collector Current 57A
Collector Emitter Voltage (VCEO) 2.9V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 247
Base Part Number IXB*42N170
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature UL RECOGNIZED
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series BIMOSFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 32 Weeks
Alternative Model
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