Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 25V
Current - Collector Pulsed (Icm) 750A
Turn Off Time-Nom (toff) 397 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 64A
Voltage - Collector Emitter Breakdown (Max) 2500V
Collector Emitter Breakdown Voltage 2.5kV
Reverse Recovery Time 160 ns
Max Collector Current 116A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Max Power Dissipation 500W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ