Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 25V
Current - Collector Pulsed (Icm) 600A
Turn Off Time-Nom (toff) 475 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 55A
Voltage - Collector Emitter Breakdown (Max) 3000V
Collector Emitter Breakdown Voltage 3kV
Reverse Recovery Time 1.9 μs
Max Collector Current 130A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 625W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ