IXBH40N160
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1600V 33A 350W TO247AD
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Buying Options
Total Price: USD $55.3
Unit Price: USD $55.29855
≥1 USD $55.29855
≥10 USD $45.3739
≥100 USD $43.95555
≥500 USD $42.53815
≥1000 USD $41.1198
≥3000 USD $36.8657
Inventory: 2892
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
Series BIMOSFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.6kV
Max Power Dissipation 350W
Current Rating 33A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 60ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6kV
Max Collector Current 33A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.6kV
Voltage - Collector Emitter Breakdown (Max) 1600V
Turn On Time 260 ns
Test Condition 960V, 20A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic 7.1V @ 15V, 20A
Turn Off Time-Nom (toff) 310 ns
Gate Charge 130nC
Current - Collector Pulsed (Icm) 40A
Gate-Emitter Voltage-Max 20V
VCEsat-Max 6 V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 700ns
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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