Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 65 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 60A
Reverse Recovery Time 1.06 μs
Continuous Drain Current (ID) 3.2A
Collector Emitter Breakdown Voltage 1.7kV
Gate to Source Voltage (Vgs) 30V
Voltage - Collector Emitter Breakdown (Max) 1700V
Drain to Source Breakdown Voltage 500V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 24A
Drain to Source Resistance 1.4Ohm
Turn Off Time-Nom (toff) 1285 ns
Current - Collector Pulsed (Icm) 230A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V