Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 120A
Turn Off Time-Nom (toff) 940 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 16A
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Reverse Recovery Time 1.32 μs
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 1.7kV
Turn-Off Delay Time 160 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ