IXBH10N170
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1700V 20A 140W TO247AD
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Buying Options
Total Price: USD $10.13
Unit Price: USD $10.1288
≥1 USD $10.1288
≥10 USD $8.19867
≥100 USD $7.71635
≥500 USD $6.992946
≥1000 USD $6.414214
Inventory: 382
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 28 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series BIMOSFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 140W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 140W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 20A
Reverse Recovery Time 360 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 63 ns
Test Condition 1360V, 10A, 56 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 10A
Turn Off Time-Nom (toff) 1800 ns
Gate Charge 30nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 35ns/500ns
Switching Energy 6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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