Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 240W
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Reverse Recovery Time 1.7 μs
Collector Emitter Breakdown Voltage 3kV
Voltage - Collector Emitter Breakdown (Max) 3000V
Test Condition 1500V, 42A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 42A
Turn Off Time-Nom (toff) 950 ns
Current - Collector Pulsed (Icm) 380A
Td (on/off) @ 25°C 72ns/445ns
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 5V