Gate-Emitter Thr Voltage-Max 8V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 340 ns
Vce(on) (Max) @ Vge, Ic 7.1V @ 15V, 20A
Test Condition 960V, 25A, 22 Ω, 15V
Collector Emitter Saturation Voltage 6.2V
Voltage - Collector Emitter Breakdown (Max) 1600V
Collector Emitter Breakdown Voltage 1.6kV
Max Collector Current 28A
Collector Emitter Voltage (VCEO) 1.6kV
Turn-Off Delay Time 300 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 200 ns
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH RELIABILITY, FAST SWITCHING
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ