IXBF12N300
RoHS 
RoHS compliant
RoHS compliantPackage i4-Pac?-5 (3 Leads)
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 3000V 26A 125W ISOPLUSI4
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Buying Options
Total Price: USD $53.7
Unit Price: USD $53.6959
≥1 USD $53.6959
≥200 USD $44.05815
≥500 USD $42.6816
≥1000 USD $41.30505
Inventory: 2819
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 98A
Gate Charge 62nC
Turn Off Time-Nom (toff) 705 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 12A
Turn On Time 460 ns
Current - Collector (Ic) (Max) 26A
Voltage - Collector Emitter Breakdown (Max) 3000V
Collector Emitter Breakdown Voltage 3kV
Reverse Recovery Time 1.4 μs
Max Collector Current 22A
Collector Emitter Voltage (VCEO) 3.2V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 125W
Input Type Standard
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e1
Series BIMOSFET?
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case i4-Pac?-5 (3 Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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