IXA20IF1200HB
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXYS SEMICONDUCTOR IXA20IF1200HBIGBT Single Transistor, 38 A, 2.1 V, 165 W, 1.2 kV, TO-247AD, 3 Pins
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Width 5.3mm
Length 16.26mm
Height 21.46mm
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.55mJ (on), 1.7mJ (off)
Gate Charge 47nC
IGBT Type PT
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Test Condition 600V, 15A, 56 Ω, 15V
Turn On Time 110 ns
Collector Emitter Saturation Voltage 1.8V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Reverse Recovery Time 350ns
Max Collector Current 38A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Power Dissipation 165W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 165W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2001
Packaging Tube
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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